Heisener Electronics
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IPT65R033G7XTMA1

650V|69A (Tc)|391W (Tc)
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MOSFET N-CH 650V 69A HSOF-8

Specifications

Brand
Infineon Technologies
Package
PG-HSOF-8-2
Packaging
—
Weight
—

Total Inventory

289pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPT65R033G7XTMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ C7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C69A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs33mOhm @ 28.9A, 10V
Vgs(th) (Max) @ Id4V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5000pF @ 400V
FET Feature-
Power Dissipation (Max)391W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-2
Package / Case8-PowerSFN

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