Contact
Send MessageIPT60R102G7XTMA1
650V|23A (Tc)|141W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 650V 23A HSOF-8
Specifications
- Brand
- Infineon Technologies
- Package
- PG-HSOF-8-2
- Packaging
- —
- Weight
- —
Total Inventory
2,987pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPT60R102G7XTMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | CoolMOS™ G7 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 102mOhm @ 7.8A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 390µA | |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1320pF @ 400V | |
| FET Feature | - | |
| Power Dissipation (Max) | 141W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-HSOF-8-2 | |
| Package / Case | 8-PowerSFN |
Recommended Products
RES 392 OHM 1/2W 1% AXIAL
OSC XO 148.351648MHZ 3.3V LVPECL
MEMS OSC XO 133.0000MHZ LVDS SMD
MEMS OSC XO 66.6660MHZ H/LV-CMOS
CAP CER 390PF 1KV X7R 0805
IC CLOCK CK505 BEARLAKE 64TSSOP
FUSE BUSS SUBMINIATURE
.8MM MICRO SOCKET STRIPS
CONN HEADER .100 SINGL STR 34POS
CONN EDGE DUAL FMALE 86POS 0.100
