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100 V|29A (Ta), 236A (Tc)|3.8W (Ta), 250W (Tc)
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MOSFET
Specifications
- Brand
- Infineon Technologies
- Package
- PG-HSOF-8
- Packaging
- —
- Weight
- —
Total Inventory
5,400pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPT022N10NF2SATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | StrongIRFET™ 2 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 236A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 2.25mOhm @ 150A, 10V | |
| Vgs(th) (Max) @ Id | 3.8V @ 169µA | |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 7300 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.8W (Ta), 250W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-HSOF-8 | |
| Package / Case | 8-PowerSFN |
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