IPT015N10NF2SATMA1

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Discover how IPT015N10NF2SATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Manufacturer	Infineon Technologies
Series	StrongIRFET™ 2
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	35A (Ta), 315A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.5mOhm @ 150A, 10V
Vgs(th) (Max) @ Id	3.8V @ 267µA
Gate Charge (Qg) (Max) @ Vgs	242 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	11000 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8
Package / Case	8-PowerSFN

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