Heisener Electronics
BOM

IPT014N10N5ATMA1

100 V|362A|-
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRENCH >=100V

Specifications

Brand
Infineon Technologies
Package
PG-HSOF-8-1
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPT014N10N5ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET Type-
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C362A
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-1
Package / Case8-PowerSFN

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