Contact
Send MessageIPT012N08NF2SATMA1
80 V|39A (Ta), 351A (Tc)|3.8W (Ta), 300W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET
Specifications
- Brand
- Infineon Technologies
- Package
- PG-HSOF-8
- Packaging
- —
- Weight
- —
Total Inventory
6,126pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPT012N08NF2SATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | StrongIRFET™ 2 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 80 V | |
| Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 351A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 1.23mOhm @ 150A, 10V | |
| Vgs(th) (Max) @ Id | 3.8V @ 267µA | |
| Gate Charge (Qg) (Max) @ Vgs | 255 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 40 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.8W (Ta), 300W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-HSOF-8 | |
| Package / Case | 8-PowerSFN |
Recommended Products
RES SMD 8.45KOHM 0.1% 1/10W 0603
CAP CER 0.47PF 50V NPO 0402
SWITCH PUSHBUTTON DPDT 3A 125V
DC DC CONVERTER 24V 200W
IC REG LINEAR 2.5V 300MA 8VSSOP
IC VOLT DETECTOR LP SC70-3
CIR BRKR MAG-HYDR 60A ROCKER
5.0MM EUROBLOCK PC 45 GRN 11A 12
CONN EDGE DUAL FMALE 26POS 0.100
CONN EDGE DUAL FMALE 10POS 0.050
