Heisener Electronics
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IPT012N08N5ATMA1

80V|300A (Tc)|375W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 80V 300A 8HSOF

Specifications

Brand
Infineon Technologies
Package
PG-HSOF-8-1
Packaging
—
Weight
—

Total Inventory

4,898pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPT012N08N5ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.2mOhm @ 150A, 10V
Vgs(th) (Max) @ Id3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs223nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds17000pF @ 40V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-1
Package / Case8-PowerSFN

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