Heisener Electronics
BOM

IPS70R900P7SAKMA1

700V|6A (Tc)|30.5W (Tc)
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MOSFET N-CHANNEL 700V 6A TO251

Specifications

Brand
Infineon Technologies
Package
PG-TO251-3
Packaging
—
Weight
—

Total Inventory

2,315pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPS70R900P7SAKMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)700V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs6.8nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds211pF @ 400V
FET Feature-
Power Dissipation (Max)30.5W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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