Contact
Send MessageIPS105N03LG
30 V|35A (Tc)|38W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
N-CHANNEL POWER MOSFET
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TO251-3-11
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPS105N03LG from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | CoolMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 38W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO251-3-11 | |
| Package / Case | TO-251-3 Stub Leads, IPAK |
Recommended Products
RES 178K OHM 1/10W 1% AXIAL
RES 698K OHM 0.1% 1/2W 2512
RES NETWORK 5 RES 20K OHM 8SOIC
MEMS OSC XO 75.0000MHZ LVPECL
CAP CER 1000PF 440VAC Y5V RADIAL
OPTOISO 3.75KV OPEN COLL 8DIP GW
.050" X .050
.025" BOARD SPACERS
CONN EDGE DUAL FMALE 86POS 0.156
