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IPS04N03LB-G

30V|50A (Tc)|115W (Tc)
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MOSFET N-CH 30V 50A IPAK

Specifications

Brand
Infineon Technologies
Package
PG-TO251-3
Packaging
—
Weight
—

Total Inventory

405pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPS04N03LB-G from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5200pF @ 15V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Stub Leads, IPak

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Datasheet & Documents

ipu04n03lb-g.pdf

PDF Document · 12 pages

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