Heisener Electronics
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IPQC60R017S7AXTMA1

600 V|30A (Tc)|500W (Tc)
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MOSFET

Specifications

Brand
Infineon Technologies
Package
PG-HDSOP-22
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPQC60R017S7AXTMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)12V
Rds On (Max) @ Id, Vgs17mOhm @ 29A, 12V
Vgs(th) (Max) @ Id4.5V @ 1.89mA
Gate Charge (Qg) (Max) @ Vgs196 nC @ 12 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7370 pF @ 300 V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HDSOP-22
Package / Case22-PowerBSOP Module

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