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600 V|50A (Tc)|694W (Tc)
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MOSFET
Specifications
- Brand
- Infineon Technologies
- Package
- PG-HDSOP-22
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPQC60R010S7AXTMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
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Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | CoolMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 12V | |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 50A, 12V | |
| Vgs(th) (Max) @ Id | 4.5V @ 3.08mA | |
| Gate Charge (Qg) (Max) @ Vgs | 318 nC @ 12 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | - | |
| Power Dissipation (Max) | 694W (Tc) | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-HDSOP-22 | |
| Package / Case | 22-PowerBSOP Module |
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