Contact
Send MessageIPP65R660CFDAAKSA1
650V|6A (Tc)|62.5W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 650V TO-220-3
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TO220-3
- Packaging
- —
- Weight
- —
Total Inventory
179pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPP65R660CFDAAKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | Automotive, AEC-Q101, CoolMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 3.2A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA | |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 543pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 62.5W (Tc) | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO220-3 | |
| Package / Case | TO-220-3 |
Recommended Products
MEMS OSC XO 33.3300MHZ H/LV-CMOS
CAP CER 47PF 63V C0G/NP0 2220
CAP CER 150PF 50V C0G/NP0 1808
CAP CER 3.9PF 50V C0G/NP0 0805
NMP CONFIGURABLE POWER SUPPLY 65
FERRITE CORE PQ 3.3UH N92 2PCS
IC FPGA 744 I/O 1152FBGA
DIODE SCHOTTKY 350MA 30V SOD123
FUSE CARTRIDGE 1A 600VAC CYLINDR
IC GATE OR 4CH 2-INP 14-SOIC
Datasheet & Documents
ipp65r660cfdaaksa1.pdf
PDF Document · 14 pages
