Heisener Electronics
BOM

IPP65R099CFD7AAKSA1

650 V|24A (Tc)|127W (Tc)
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MOSFET N-CH 650V 24A TO220-3

Specifications

Brand
Infineon Technologies
Package
PG-TO220-3
Packaging
—
Weight
—

Total Inventory

114pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPP65R099CFD7AAKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2513 pF @ 400 V
FET Feature-
Power Dissipation (Max)127W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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