Heisener Electronics
BOM

IPP60R190P6

600V|20.2A (Tc)|151W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 600V 20.2A TO220

Specifications

Brand
Infineon Technologies
Package
PG-TO-220-3
Packaging
—
Weight
—

Total Inventory

4,224pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPP60R190P6 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS? P6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190 mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id4.5V @ 630µ
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1750pF @ 100V
FET Feature-
Power Dissipation (Max)151W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO-220-3
Package / CaseTO-220-3

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