Heisener Electronics
BOM

IPP60R099C6

600V|37.9A (Tc)|278W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 600V 37.9A TO220

Specifications

Brand
Infineon Technologies
Package
PG-TO-220-3
Packaging
—
Weight
—

Total Inventory

398,508pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPP60R099C6 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99 mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id3.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs119nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2660pF @ 100V
FET Feature-
Power Dissipation (Max)278W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO-220-3
Package / CaseTO-220-3

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