Heisener Electronics
BOM

IPP60R080P7XKSA1

600V|37A (Tc)|129W (Tc)
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MOSFET N-CH 600V 37A TO220-3

Specifications

Brand
Infineon Technologies
Package
PG-TO220-3
Packaging
—
Weight
—

Total Inventory

686pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPP60R080P7XKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs80mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2180pF @ 400V
FET Feature-
Power Dissipation (Max)129W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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