Heisener Electronics
BOM

IPP50R190CE

500V|18.5A (Tc)|127W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 500V 18.5A PG-TO-220

Specifications

Brand
Infineon Technologies
Package
PG-TO-220-3
Packaging
—
Weight
—

Total Inventory

103,944pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPP50R190CE from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS? CE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)13V
Rds On (Max) @ Id, Vgs190 mOhm @ 6.2A, 13V
Vgs(th) (Max) @ Id3.5V @ 510µA
Gate Charge (Qg) (Max) @ Vgs47.2nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1137pF @ 100V
FET Feature-
Power Dissipation (Max)127W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO-220-3
Package / CaseTO-220-3

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