Heisener Electronics
BOM

IPP050N10NF2SAKMA1

100 V|19.4A (Ta), 110A (Tc)|3.8W (Ta), 150W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRENCH >=100V

Specifications

Brand
Infineon Technologies
Package
PG-TO220-3
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPP050N10NF2SAKMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesStrongIRFET™ 2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C19.4A (Ta), 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id3.8V @ 84µA
Gate Charge (Qg) (Max) @ Vgs76 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 50 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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