Heisener Electronics
BOM

IPP016N06NF2SAKMA1

60 V|36A (Ta), 194A (Tc)|3.8W (Ta), 250W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRENCH 40<-<100V PG-TO220-3

Specifications

Brand
Infineon Technologies
Package
PG-TO220-3-U05
Packaging
—
Weight
—

Total Inventory

1,455pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPP016N06NF2SAKMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesStrongIRFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C36A (Ta), 194A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.3V @ 186µA
Gate Charge (Qg) (Max) @ Vgs233 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10500 pF @ 30 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-U05
Package / CaseTO-220-3

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