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IPN60R360PFD7SATMA1

600 V|10A (Tc)|7W (Tc)
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MOSFET N-CH 600V 10A SOT223

Specifications

Brand
Infineon Technologies
Package
PG-SOT223-3-1
Packaging
—
Weight
—

Total Inventory

40,212pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPN60R360PFD7SATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™PFD7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id4.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs12.7 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds534 pF @ 400 V
FET Feature-
Power Dissipation (Max)7W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-3-1
Package / CaseTO-261-3

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