Heisener Electronics
BOM

IPN60R1K5PFD7SATMA1

600 V|3.6A (Tc)|6W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 600V 3.6A SOT223

Specifications

Brand
Infineon Technologies
Package
PG-SOT223-3
Packaging
—
Weight
—

Total Inventory

8,880pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPN60R1K5PFD7SATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™PFD7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id4.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs4.6 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds169 pF @ 400 V
FET Feature-
Power Dissipation (Max)6W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-3
Package / CaseTO-261-4, TO-261AA

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