Heisener Electronics
BOM

IPN50R1K4CEATMA1

500V|4.8A (Tc)|5W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

CONSUMER

Specifications

Brand
Infineon Technologies
Package
PG-SOT223
Packaging
—
Weight
—

Total Inventory

314pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPN50R1K4CEATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ CE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)13V
Rds On (Max) @ Id, Vgs1.4Ohm @ 900mA, 13V
Vgs(th) (Max) @ Id3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs8.2nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds178pF @ 100V
FET Feature-
Power Dissipation (Max)5W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223
Package / CaseSOT-223-3

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