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650V|11.4A (Tc)|104.2W (Tc)
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MOSFET N-CH 650V 11.4A TO262
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TO262-3
- Packaging
- —
- Weight
- —
Total Inventory
114pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPI65R310CFDXKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
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Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | CoolMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 310mOhm @ 4.4A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 440µA | |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 104.2W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO262-3 | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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