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IPI08CNE8N-G

85V|95A (Tc)|167W (Tc)
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MOSFET N-CH 85V 95A TO262-3

Specifications

Brand
Infineon Technologies
Package
PG-TO262-3
Packaging
—
Weight
—

Total Inventory

243pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPI08CNE8N-G from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)85V
Current - Continuous Drain (Id) @ 25°C95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.4mOhm @ 95A, 10V
Vgs(th) (Max) @ Id4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs99nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6690pF @ 40V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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Datasheet & Documents

ipi08cne8n-g.pdf

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