IPI052NE7N3-G

75V|80A (Tc)|150W (Tc)

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MOSFET N-CH 75V 80A TO262-3

376pcs

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MOQ: 1 pcs

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Manufacturer	Infineon Technologies
Series	OptiMOS™
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	3.8V @ 91µA
Gate Charge (Qg) (Max) @ Vgs	68nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4750pF @ 37.5V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA