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60V|20A|65W
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MOSFET 2N-CH 8TDSON
Specifications
- Brand
- Infineon Technologies
- Package
- 8-PowerVDFN
- Packaging
- —
- Weight
- —
Total Inventory
467pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPG20N06S4L11AATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | Automotive, AEC-Q101, OptiMOS™ | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 20A | |
| Rds On (Max) @ Id, Vgs | 11.2mOhm @ 17A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 28µA | |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4020pF @ 25V | |
| Power - Max | 65W | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount, Wettable Flank | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | PG-TDSON-8-10 |
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