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IPF09N03LA-G

25V|50A (Tc)|63W (Tc)
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MOSFET N-CH 25V 50A DPAK

Specifications

Brand
Infineon Technologies
Package
P-TO252-3
Packaging
—
Weight
—

Total Inventory

356pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPF09N03LA-G from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1642pF @ 15V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageP-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

ips09n03la-g.pdf

PDF Document · 12 pages

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