Heisener Electronics
BOM

IPF016N10NF2SATMA1

100 V|274A (Tc)|300W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRENCH >=100V

Specifications

Brand
Infineon Technologies
Package
PG-TO263-7-14
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPF016N10NF2SATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesStrongIRFET™ 2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C274A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 267µA
Gate Charge (Qg) (Max) @ Vgs241 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11000 pF @ 50 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-14
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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