Heisener Electronics
BOM

IPF015N10N5ATMA1

100 V|35A (Ta), 276A (Tc)|3.8W (Ta), 375W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRENCH >=100V

Specifications

Brand
Infineon Technologies
Package
PG-TO263-7-1
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPF015N10N5ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™ 5
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C35A (Ta), 276A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.53mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 279µA
Gate Charge (Qg) (Max) @ Vgs210 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds16000 pF @ 50 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-1
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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