Heisener Electronics
BOM

IPF013N04NF2SATMA1

40 V|40A (Ta), 232A (Tc)|3.8W (Ta), 188W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRENCH <= 40V

Specifications

Brand
Infineon Technologies
Package
PG-TO263-7-U02
Packaging
—
Weight
—

Total Inventory

2,400pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPF013N04NF2SATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesStrongIRFET™2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C40A (Ta), 232A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.35mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.4V @ 126µA
Gate Charge (Qg) (Max) @ Vgs159 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7500 pF @ 20 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 188W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-U02
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)

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