Heisener Electronics
BOM

IPDQ65R080CFD7AXTMA1

650 V|36A (Tc)|223W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

AUTOMOTIVE_COOLMOS

Specifications

Brand
Infineon Technologies
Package
PG-HDSOP-22-1
Packaging
—
Weight
—

Total Inventory

1,500pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPDQ65R080CFD7AXTMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs80mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2513 pF @ 400 V
FET Feature-
Power Dissipation (Max)223W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HDSOP-22-1
Package / Case22-PowerBSOP Module

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