Heisener Electronics
BOM

IPDQ65R017CFD7XTMA1

650 V|136A (Tc)|694W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

HIGH POWER_NEW

Specifications

Brand
Infineon Technologies
Package
PG-HDSOP-22-1
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPDQ65R017CFD7XTMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C136A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs17mOhm @ 61.6A, 10V
Vgs(th) (Max) @ Id4.5V @ 3.08mA
Gate Charge (Qg) (Max) @ Vgs236 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12338 pF @ 400 V
FET Feature-
Power Dissipation (Max)694W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HDSOP-22-1
Package / Case22-PowerBSOP Module

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