Heisener Electronics
BOM

IPDD60R105CFD7XTMA1

600 V|31A (Tc)|198W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 600V 31A HDSOP-10

Specifications

Brand
Infineon Technologies
Package
PG-HDSOP-10-1
Packaging
—
Weight
—

Total Inventory

216pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPDD60R105CFD7XTMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ CFD7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs105mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1504 pF @ 400 V
FET Feature-
Power Dissipation (Max)198W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HDSOP-10-1
Package / Case10-PowerSOP Module

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