Heisener Electronics
BOM

IPD90P04P4L04ATMA2

40 V|90A (Tc)|125W (Tc)
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MOSFET P-CH 40V 90A TO252-3

Specifications

Brand
Infineon Technologies
Package
PG-TO252-3-313
Packaging
—
Weight
—

Total Inventory

37,539pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPD90P04P4L04ATMA2 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS®-P2
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.3mOhm @ 90A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs176 nC @ 10 V
Vgs (Max)+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds11570 pF @ 25 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-313
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63

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