Heisener Electronics
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IPD90P03P404ATMA1

30V|90A (Tc)|137W (Tc)
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MOSFET P-CH 30V 90A TO252-3

Specifications

Brand
Infineon Technologies
Package
PG-TO252-3
Packaging
—
Weight
—

Total Inventory

8,636pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPD90P03P404ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 253µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10300pF @ 25V
FET Feature-
Power Dissipation (Max)137W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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