Heisener Electronics
BOM

IPD90N03S4L02ATMA1

30V|90A (Tc)|136W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 30V 90A TO252-3

Specifications

Brand
Infineon Technologies
Package
PG-TO252-3
Packaging
—
Weight
—

Total Inventory

4,338pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPD90N03S4L02ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.2mOhm @ 90A, 10V
Vgs(th) (Max) @ Id2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs140nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds9750pF @ 25V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Recommended Products

RNF14FTD7K68

RNF14FTD7K68

RES 7.68K OHM 1/4W 1% AXIAL

ERJ-S1TF2613U

ERJ-S1TF2613U

RES SMD 261K OHM 1% 1W 2512

SIT8209AI-32-33S-100-000000X

SIT8209AI-32-33S-100-000000X

MEMS OSC XO 100.0000MHZ LVCMOS

1808Y0630563MXR

1808Y0630563MXR

CAP CER 0.056UF 63V X7R 1808

VI-B7R-MW

VI-B7R-MW

DC DC CONVERTER 7.5V 100W

ELM25003GD-201

ELM25003GD-201

LED ASSEMBLY

2-103233-4

2-103233-4

CONN HEADER 50POS .100" DUAL

MS27484T16F99S-LC

MS27484T16F99S-LC

CONN PLUG HSG FMALE 23POS INLINE

FRCIR030FP-20-29P-F80-T100VO

FRCIR030FP-20-29P-F80-T100VO

CONN RCPT HSNG MALE 17POS PNL MT

IXFA4N100P-TRL

IXFA4N100P-TRL

MOSFET N-CH 1000V 4A TO263