Heisener Electronics
BOM

IPD80R4K5P7ATMA1

800V|1.5A (Tc)|13W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 800V 1.5A DPAK

Specifications

Brand
Infineon Technologies
Package
TO-252
Packaging
—
Weight
—

Total Inventory

359pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPD80R4K5P7ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds80pF @ 500V
FET FeatureSuper Junction
Power Dissipation (Max)13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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