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30 V|80A (Tc)|88W (Tc)
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MOSFET P-CH 30V 80A TO252-31
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TO252-3-11
- Packaging
- —
- Weight
- —
Total Inventory
67,995pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPD80P03P4L07ATMA2 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS®-P2 | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 80A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 130µA | |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | |
| Vgs (Max) | +5V, -16V | |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 88W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3-11 | |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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