Heisener Electronics
BOM

IPD80P03P4L07ATMA1

30V|80A (Tc)|88W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET P-CH 30V 80A TO252-3

Specifications

Brand
Infineon Technologies
Package
PG-TO252-3
Packaging
—
Weight
—

Total Inventory

470pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPD80P03P4L07ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds5700pF @ 25V
FET Feature-
Power Dissipation (Max)88W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Recommended Products

RNC50H38R3FSR36

RNC50H38R3FSR36

RES 38.3 OHM 1/10W 1% AXIAL

744212181

744212181

CMC 180UH 300MA 2LN 1 KOHM SMD

T491X685K050AH

T491X685K050AH

CAP TANT 6.8UF 10% 50V 2917

SS210LHMQG_1

SS210LHMQG_1

DIODE SCHOTTKY 100V 2A SUB SMA

ESQ-105-59-G-S-LL

ESQ-105-59-G-S-LL

ELEVATED SOCKET STRIPS

DW-03-11-G-D-472

DW-03-11-G-D-472

.025" BOARD SPACERS

FCE17A15PN290

FCE17A15PN290

CONN D-SUB PLUG 15POS VERT SLDR

622-037-260-042

622-037-260-042

CONN D-SUB RCPT 37POS R/A SOLDER

MS27468T15B35SA_25A

MS27468T15B35SA_25A

CONN RCPT 37POS JAM NUT W/SCKT

NSR006A0X4Z

NSR006A0X4Z

CONVERT DC-DC 0.59 6V @ 6A SIP