Heisener Electronics
BOM

IPD70P04P4L08AUMA2

40 V|70A (Tc)|75W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET

Specifications

Brand
Infineon Technologies
Package
PG-TO252-3-313
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPD70P04P4L08AUMA2 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS®-P2
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.8mOhm @ 70A, 10V
Vgs(th) (Max) @ Id2.2V @ 120µA
Gate Charge (Qg) (Max) @ Vgs92 nC @ 10 V
Vgs (Max)+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds5430 pF @ 25 V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-313
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63

Recommended Products

Y070647K0000B9L

Y070647K0000B9L

RES 47K OHM 0.1% 0.4W RADIAL

D55342E07B14B3MWS

D55342E07B14B3MWS

RES SMD 14.3K OHM 0.1% 1/4W 1206

SIT8208AC-G2-33E-12-288000T

SIT8208AC-G2-33E-12-288000T

MEMS OSC XO 12.2880MHZ LVCMOS LV

1808J5000180FFR

1808J5000180FFR

CAP CER 18PF 500V C0G/NP0 1808

HMC641A

HMC641A

IC SW SP4T NON-REFL DIE

FTMH-118-03-L-DH-K-TR

FTMH-118-03-L-DH-K-TR

1MM MICRO TERMINAL STRIPS

1761012-3

1761012-3

SFP 1X4 LIGHT PIPE ASSY

GTS020R-36-10P

GTS020R-36-10P

CONN RCPT 48POS BOX MNT PIN

ACT94WC08PB-61490

ACT94WC08PB-61490

ACT94WC08PB-6149

ACC19DRES-S734

ACC19DRES-S734

CONN EDGE DUAL FMALE 38POS 0.100