Heisener Electronics
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IPD65R660CFDATMA2

700 V|6A (Tc)|63W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 700V 6A TO252-3-313

Specifications

Brand
Infineon Technologies
Package
PG-TO252-3-313
Packaging
—
Weight
—

Total Inventory

5,481pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPD65R660CFDATMA2 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ CFD2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)700 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs660mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds615 pF @ 100 V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-313
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63

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