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IPD60R600P7SAUMA1

600V|6A (Tc)|30W (Tc)
原装正品全球货源快速交付品质认证技术支持批量优惠

MOSFET N-CH 600V 6A TO252-3

规格参数

品牌
Infineon Technologies
封装
PG-TO252-3
包装方式
—

库存总量

124个

12小时发货

起订量:1 个

认证与授权

产品视频

了解 Infineon Technologies 的 IPD60R600P7SAUMA1 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。

  • 原厂采购,全程可追溯
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技术规格

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds363pF @ 400V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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