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IPD60R360P7SAUMA1

600V|9A (Tc)|41W (Tc)
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MOSFET N-CH 600V 9A TO252-3

Specifications

Brand
Infineon Technologies
Package
PG-TO252-3
Packaging
—
Weight
—

Total Inventory

454pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPD60R360P7SAUMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds555pF @ 400V
FET Feature-
Power Dissipation (Max)41W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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