Heisener Electronics
BOM

IPD60R2K0PFD7SAUMA1

600 V|3A (Tc)|20W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 600V 3A TO252-3

Specifications

Brand
Infineon Technologies
Package
PG-TO252-3-344
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPD60R2K0PFD7SAUMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ PFD7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs3.8 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds134 pF @ 400 V
FET Feature-
Power Dissipation (Max)20W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-344
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63

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