Contact
Send MessageIPD60R2K0C6ATMA1
600V|2.4A (Tc)|22.3W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 600V TO252
Specifications
- Brand
- Infineon Technologies
- Package
- TO-252-3
- Packaging
- —
- Weight
- —
Total Inventory
414pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPD60R2K0C6ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | CoolMOS™ C6 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 760mA, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 60µA | |
| Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 22.3W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-252-3 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Recommended Products
IC DRAM 256M PARALLEL 90VFBGA
IC MCU 8BIT 4KB OTP 20DIP
IC MCU 8BIT 128KB FLASH 100QIPE
DIODE ZENER 17V 5W T18
MOSFET N CH 100V 52A TO220
EDGEON SQUARE 30 NI .375 CNTR
CONN IC DIP SOCKET ZIF 28POS TIN
ELEVATED 2MM SOCKETS
CONN MOD JACK 8P8C R/A SHLD
VOLTAGE REGULATOR
