IPD50R800CEATMA1

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Discover how IPD50R800CEATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Manufacturer	Infineon Technologies
Series	CoolMOS™ CE
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	13V
Rds On (Max) @ Id, Vgs	800mOhm @ 1.5A, 13V
Vgs(th) (Max) @ Id	3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs	12.4nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 100V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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