Heisener Electronics
BOM

IPD50R280CEBTMA1

500V|13A (Tc)|92W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 500V 13A PG-TO252

Specifications

Brand
Infineon Technologies
Package
PG-TO252-3
Packaging
—
Weight
—

Total Inventory

402pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPD50R280CEBTMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)13V
Rds On (Max) @ Id, Vgs280mOhm @ 4.2A, 13V
Vgs(th) (Max) @ Id3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs32.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds773pF @ 100V
FET FeatureSuper Junction
Power Dissipation (Max)92W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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