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IPD50P04P413ATMA1

40V|50A (Tc)|58W (Tc)
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MOSFET P-CH 40V 50A TO252-3

Specifications

Brand
Infineon Technologies
Package
PG-TO252-3-313
Packaging
—
Weight
—

Total Inventory

16,893pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPD50P04P413ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3670pF @ 25V
FET Feature-
Power Dissipation (Max)58W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-313
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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