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IPD50N10S3L16ATMA2

100 V|50A (Tc)|100W (Tc)
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MOSFET_(75V 120V(

Specifications

Brand
Infineon Technologies
Package
PG-TO252-3-11
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPD50N10S3L16ATMA2 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerInfineon Technologies
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4180 pF @ 25 V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-11
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63

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